BSO303PHXUMA1 parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Infineon

Model:

BSO303PHXUMA1

Description:

MOSFET 2P-CH 30V 7A 8DSO

Stock:

13192

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.08

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Offer

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Parameters

Current at 25 ° C - continuous drain (Id)

Drain source voltage (Vdss)

30V

FET Type

2 P Channel(two)

FET function

Logic level gate

Gate charge (Qg) at different Vgs (maximum)

49nC @ 10V

Input capacitance at different Vds (Ciss) (maximum)

2678pF @ 25V

On resistance (maximum) for different Ids and Vgs

21 mΩ @ 8.2A,10V

Power - maximum

Vgs (th) (maximum) for different Ids

2V @ 100µA

packing

TR,CT,bulk

series

OptiMOS™

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

8-SOIC(0.154,3.90mm wide)

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

stop production

DataSheet

BSO303PHXUMA1（FET, MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory13192,Price reference "real-time change" China/Hongkong。 BSO303PHXUMA1 package/specs, Download BSO303PHXUMA1、Datasheet。